DF200R12KE3HOSA1

Mfr.Part #
DF200R12KE3HOSA1
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
DF200R12KE3HOSA1
Description
IGBT MODULE 1200V 1040W
Stock
35000

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Manufacturer :
Infineon Technologies
Product Category :
Discrete Semiconductor Products > Transistors - IGBTs - Modules
Configuration :
Single
Current - Collector (Ic) (Max) :
-
Current - Collector Cutoff (Max) :
5 mA
IGBT Type :
-
Input :
Standard
Input Capacitance (Cies) @ Vce :
14 nF @ 25 V
Mounting Type :
Chassis Mount
NTC Thermistor :
No
Operating Temperature :
-40°C ~ 125°C
Package / Case :
Module
Power - Max :
1040 W
Product Status :
Active
Supplier Device Package :
Module
Vce(on) (Max) @ Vge, Ic :
2.15V @ 15V, 200A
Voltage - Collector Emitter Breakdown (Max) :
1200 V
Datasheets
DF200R12KE3HOSA1

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