DF200R12W1H3B27BOMA1

Manufacturer :

Infineon Technologies

Product Category :

Discrete Semiconductor Products > Transistors - IGBTs - Modules

Configuration :

2 Independent

Current - Collector (Ic) (Max) :

30 A

Current - Collector Cutoff (Max) :

1 mA

IGBT Type :

-

Input :

Standard

Input Capacitance (Cies) @ Vce :

2 nF @ 25 V

Mounting Type :

Chassis Mount

NTC Thermistor :

Yes

Operating Temperature :

-40°C ~ 150°C

Package / Case :

Module

Power - Max :

375 W

Product Status :

Active

Supplier Device Package :

Module

Vce(on) (Max) @ Vge, Ic :

1.3V @ 15V, 30A

Voltage - Collector Emitter Breakdown (Max) :

1200 V