DF80R12W2H3B11BOMA1

Mfr.Part #
DF80R12W2H3B11BOMA1
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
DF80R12W2H3B11BOMA1
Description
IGBT MODULE
Stock
285

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Manufacturer :
Infineon Technologies
Product Category :
Discrete Semiconductor Products > Transistors - IGBTs - Modules
Configuration :
Dual Boost Chopper
Current - Collector (Ic) (Max) :
50 A
Current - Collector Cutoff (Max) :
1 mA
IGBT Type :
-
Input :
Standard
Input Capacitance (Cies) @ Vce :
2350 pF @ 25 V
Mounting Type :
Chassis Mount
NTC Thermistor :
Yes
Operating Temperature :
-40°C ~ 150°C (TJ)
Package / Case :
Module
Power - Max :
190 W
Product Status :
Active
Supplier Device Package :
-
Vce(on) (Max) @ Vge, Ic :
1.7V @ 15V, 20A
Voltage - Collector Emitter Breakdown (Max) :
1200 V
Datasheets
DF80R12W2H3B11BOMA1

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