3LN01C-TB-E

Manufacturer :

onsemi

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

150mA (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

1.5V, 4V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

1.58 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

7 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation (Max) :

250mW (Ta)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

3.7Ohm @ 80mA, 4V

Supplier Device Package :

SC-59-3/CP3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±10V

Vgs(th) (Max) @ Id :

-