SI8805EDB-T2-E1
- Mfr.Part #
- SI8805EDB-T2-E1
- Manufacturer
- Vishay
- Package/Case
- -
- Datasheet
- SI8805EDB-T2-E1
- Description
- MOSFET P-CH 8V 4MICROFOOT
- Stock
- 35000
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- Comment:
- Manufacturer :
- Vishay
- Product Category :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 2.2A (Ta)
- Drain to Source Voltage (Vdss) :
- 8 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 1.2V, 4.5V
- FET Feature :
- -
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 10 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 4-XFBGA, CSPBGA
- Power Dissipation (Max) :
- 500mW (Ta)
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 68mOhm @ 1.5A, 4.5V
- Supplier Device Package :
- 4-Microfoot
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±5V
- Vgs(th) (Max) @ Id :
- 700mV @ 250µA
- Datasheets
- SI8805EDB-T2-E1
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