APTM100DA18CT1G

Manufacturer :

Microsemi

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

40A (Tc)

Drain to Source Voltage (Vdss) :

1000 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

570 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

14800 pF @ 25 V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

SP1

Power Dissipation (Max) :

657W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

216mOhm @ 33A, 10V

Supplier Device Package :

SP1

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 2.5mA