TPC8031-H(TE12LQM)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

11A (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

21 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

2150 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Power Dissipation (Max) :

-

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

13.3mOhm @ 5.5A, 10V

Supplier Device Package :

8-SOP (5.5x6.0)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

2.5V @ 1mA