SPB21N10 G

Mfr.Part #
SPB21N10 G
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
SPB21N10 G
Description
MOSFET N-CH 100V 21A TO263-3
Stock
35000

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Manufacturer :
Infineon Technologies
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
21A (Tc)
Drain to Source Voltage (Vdss) :
100 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
38.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
865 pF @ 25 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max) :
90W (Tc)
Product Status :
Obsolete
Rds On (Max) @ Id, Vgs :
80mOhm @ 15A, 10V
Supplier Device Package :
PG-TO263-3-2
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 44µA
Datasheets
SPB21N10 G

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