FCP11N60N

Mfr.Part #
FCP11N60N
Manufacturer
onsemi
Package/Case
-
Datasheet
FCP11N60N
Description
MOSFET N-CH 600V 10.8A TO220-3
Stock
35000

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Manufacturer :
onsemi
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
10.8A (Tc)
Drain to Source Voltage (Vdss) :
600 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
35.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
1505 pF @ 100 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-220-3
Power Dissipation (Max) :
94W (Tc)
Product Status :
Obsolete
Rds On (Max) @ Id, Vgs :
299mOhm @ 5.4A, 10V
Supplier Device Package :
TO-220-3
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
4V @ 250µA
Datasheets
FCP11N60N

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