NX2301P,215

Manufacturer :

NXP Semiconductors

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2A (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

6 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

380 pF @ 6 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation (Max) :

400mW (Ta), 2.8W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

120mOhm @ 1A, 4.5V

Supplier Device Package :

SOT-23

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1.1V @ 250µA