FQNL2N50BTA

Mfr.Part #
FQNL2N50BTA
Manufacturer
Fairchild Semiconductor
Package/Case
-
Datasheet
FQNL2N50BTA
Description
POWER FIELD-EFFECT TRANSISTOR, 0
Stock
35000

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Manufacturer :
Fairchild Semiconductor
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
350mA (Tc)
Drain to Source Voltage (Vdss) :
500 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
230 pF @ 25 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-226-3, TO-92-3 Long Body (Formed Leads)
Power Dissipation (Max) :
1.5W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
5.3Ohm @ 175mA, 10V
Supplier Device Package :
TO-92-3
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
3.7V @ 250µA
Datasheets
FQNL2N50BTA

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