G06N10

Mfr.Part #
G06N10
Manufacturer
Goford Semiconductor
Package/Case
-
Datasheet
G06N10
Description
N100V,RD(MAX)<240M@10V,VTH1.2V~3
Stock
63

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Manufacturer :
Goford Semiconductor
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
6A
Drain to Source Voltage (Vdss) :
100 V
Drive Voltage (Max Rds On, Min Rds On) :
-
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
190 pF @ 50 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max) :
25W
Product Status :
Active
Rds On (Max) @ Id, Vgs :
240mOhm @ 6A, 10V
Supplier Device Package :
TO-252 (DPAK)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
3V @ 250µA
Datasheets
G06N10

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