STI11NM80

Manufacturer :

STMicroelectronics

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

11A (Tc)

Drain to Source Voltage (Vdss) :

800 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

43.6 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1630 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-65°C ~ 150°C (TJ)

Package / Case :

TO-262-3 Long Leads, I²Pak, TO-262AA

Power Dissipation (Max) :

150W (Tc)

Product Status :

Not For New Designs

Rds On (Max) @ Id, Vgs :

400mOhm @ 5.5A, 10V

Supplier Device Package :

I2PAK (TO-262)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 250µA