DMN6013LFG-13

Mfr.Part #
DMN6013LFG-13
Manufacturer
Diodes Incorporated
Package/Case
-
Datasheet
DMN6013LFG-13
Description
MOSFET N-CH 60V 10.3A PWRDI3333
Stock
35000

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Manufacturer :
Diodes Incorporated
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
10.3A (Ta), 45A (Tc)
Drain to Source Voltage (Vdss) :
60 V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
55.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
2577 pF @ 30 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-PowerVDFN
Power Dissipation (Max) :
1W (Ta)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
13mOhm @ 10A, 10V
Supplier Device Package :
PowerDI3333-8
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
3V @ 250µA
Datasheets
DMN6013LFG-13

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