DMN2005LP4K-7

Manufacturer :

Diodes Incorporated

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

200mA (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

1.5V, 4V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

41 pF @ 3 V

Mounting Type :

Surface Mount

Operating Temperature :

-65°C ~ 150°C (TJ)

Package / Case :

3-XFDFN

Power Dissipation (Max) :

400mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.5Ohm @ 10mA, 4V

Supplier Device Package :

X2-DFN1006-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±10V

Vgs(th) (Max) @ Id :

900mV @ 100µA