SIRA00DP-T1-GE3

Mfr.Part #
SIRA00DP-T1-GE3
Manufacturer
Vishay
Package/Case
-
Datasheet
SIRA00DP-T1-GE3
Description
MOSFET N-CH 30V 100A PPAK SO-8
Stock
35000

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Manufacturer :
Vishay
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
100A (Tc)
Drain to Source Voltage (Vdss) :
30 V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
11700 pF @ 15 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
PowerPAK® SO-8
Power Dissipation (Max) :
6.25W (Ta), 104W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
1mOhm @ 20A, 10V
Supplier Device Package :
PowerPAK® SO-8
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
+20V, -16V
Vgs(th) (Max) @ Id :
2.2V @ 250µA
Datasheets
SIRA00DP-T1-GE3

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