SPB20N60C3ATMA1

Mfr.Part #
SPB20N60C3ATMA1
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
SPB20N60C3ATMA1
Description
MOSFET N-CH 650V 20.7A TO263-3
Stock
269

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Manufacturer :
Infineon Technologies
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
20.7A (Tc)
Drain to Source Voltage (Vdss) :
650 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
2400 pF @ 25 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max) :
208W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
190mOhm @ 13.1A, 10V
Supplier Device Package :
PG-TO263-3-2
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
3.9V @ 1mA
Datasheets
SPB20N60C3ATMA1

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