G06N06S

Manufacturer :

Goford Semiconductor

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

8A

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

46 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1600 pF @ 30 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Power Dissipation (Max) :

2.1W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

22mOhm @ 6A, 10V

Supplier Device Package :

8-SOP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.4V @ 250µA