G06P01E

Mfr.Part #
G06P01E
Manufacturer
Goford Semiconductor
Package/Case
-
Datasheet
G06P01E
Description
P12V,RD(MAX)<28M@-4.5V,RD(MAX)<4
Stock
10223

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Manufacturer :
Goford Semiconductor
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
4A (Tc)
Drain to Source Voltage (Vdss) :
12 V
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
FET Feature :
-
FET Type :
P-Channel
Gate Charge (Qg) (Max) @ Vgs :
14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds :
1087 pF @ 6 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max) :
1.8W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
28mOhm @ 3A, 4.5V
Supplier Device Package :
SOT-23-3
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±10V
Vgs(th) (Max) @ Id :
1V @ 250µA
Datasheets
G06P01E

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