TSM300NB06CR RLG

Mfr.Part #
TSM300NB06CR RLG
Manufacturer
Taiwan Semiconductor
Package/Case
-
Datasheet
TSM300NB06CR RLG
Description
MOSFET N-CH 60V 6A/27A 8PDFN
Stock
4666

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Manufacturer :
Taiwan Semiconductor
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
6A (Ta), 27A (Tc)
Drain to Source Voltage (Vdss) :
60 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
1110 pF @ 30 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
8-PowerLDFN
Power Dissipation (Max) :
3.1W (Ta), 56W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
30mOhm @ 6A, 10V
Supplier Device Package :
8-PDFN (5.2x5.75)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4.5V @ 250µA
Datasheets
TSM300NB06CR RLG

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