NP23N06YDG-E1-AY

Mfr.Part #
NP23N06YDG-E1-AY
Manufacturer
Intersil (Renesas Electronics Corporation)
Package/Case
-
Datasheet
NP23N06YDG-E1-AY
Description
MOSFET N-CH 60V 23A 8HSON
Stock
5000

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
23A (Tc)
Drain to Source Voltage (Vdss) :
60 V
Drive Voltage (Max Rds On, Min Rds On) :
5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
1800 pF @ 25 V
Mounting Type :
Surface Mount
Operating Temperature :
175°C (TJ)
Package / Case :
8-SMD, Flat Lead Exposed Pad
Power Dissipation (Max) :
1W (Ta), 60W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
27mOhm @ 11.5A, 10V
Supplier Device Package :
8-HSON
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Datasheets
NP23N06YDG-E1-AY

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