TPH3205WSBQA

Mfr.Part #
TPH3205WSBQA
Manufacturer
Transphorm
Package/Case
-
Datasheet
TPH3205WSBQA
Description
GANFET N-CH 650V 35A TO247-3
Stock
364

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Manufacturer :
Transphorm
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
35A (Tc)
Drain to Source Voltage (Vdss) :
650 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
42 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds :
2200 pF @ 400 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-247-3
Power Dissipation (Max) :
125W (Tc)
Product Status :
Not For New Designs
Rds On (Max) @ Id, Vgs :
62mOhm @ 22A, 8V
Supplier Device Package :
TO-247-3
Technology :
GaNFET (Gallium Nitride)
Vgs (Max) :
±18V
Vgs(th) (Max) @ Id :
2.6V @ 700µA
Datasheets
TPH3205WSBQA

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