TP65H015G5WS

Mfr.Part #
TP65H015G5WS
Manufacturer
Transphorm
Package/Case
-
Datasheet
TP65H015G5WS
Description
650 V 95 A GAN FET
Stock
456

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Manufacturer :
Transphorm
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
93A (Tc)
Drain to Source Voltage (Vdss) :
650 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
5218 pF @ 400 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-247-3
Power Dissipation (Max) :
266W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
18mOhm @ 60A, 10V
Supplier Device Package :
TO-247-3
Technology :
GaNFET (Gallium Nitride)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4.8V @ 2mA
Datasheets
TP65H015G5WS

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