SI4200DY-T1-GE3

Mfr.Part #
SI4200DY-T1-GE3
Manufacturer
Vishay
Package/Case
-
Datasheet
SI4200DY-T1-GE3
Description
MOSFET 2N-CH 25V 8A 8SOIC
Stock
35000

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Manufacturer :
Vishay
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
8A
Drain to Source Voltage (Vdss) :
25V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
415pF @ 13V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Power - Max :
2.8W
Product Status :
Obsolete
Rds On (Max) @ Id, Vgs :
25mOhm @ 7.3A, 10V
Supplier Device Package :
8-SOIC
Vgs(th) (Max) @ Id :
2.2V @ 250µA
Datasheets
SI4200DY-T1-GE3

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