NXH010P90MNF1PG

Manufacturer :

onsemi

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

154A (Tc)

Drain to Source Voltage (Vdss) :

900V

FET Feature :

Silicon Carbide (SiC)

FET Type :

2 N-Channel (Dual) Common Source

Gate Charge (Qg) (Max) @ Vgs :

546.4nC @ 15V

Input Capacitance (Ciss) (Max) @ Vds :

7007pF @ 450V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

Module

Power - Max :

328W (Tj)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

14mOhm @ 100A, 15V

Supplier Device Package :

-

Vgs(th) (Max) @ Id :

4.3V @ 40mA