TSM200N03DPQ33 RGG

Mfr.Part #
TSM200N03DPQ33 RGG
Manufacturer
Taiwan Semiconductor
Package/Case
-
Datasheet
TSM200N03DPQ33 RGG
Description
MOSFET 2 N-CH 30V 20A 8PDFN
Stock
35000

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Manufacturer :
Taiwan Semiconductor
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
20A (Tc)
Drain to Source Voltage (Vdss) :
30V
FET Feature :
Standard
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
345pF @ 25V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-PowerWDFN
Power - Max :
20W
Product Status :
Active
Rds On (Max) @ Id, Vgs :
20mOhm @ 10A, 10V
Supplier Device Package :
8-PDFN (3x3)
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Datasheets
TSM200N03DPQ33 RGG

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