BSM400D12P3G002

Mfr.Part #
BSM400D12P3G002
Manufacturer
ROHM Semiconductor
Package/Case
-
Datasheet
BSM400D12P3G002
Description
1200V, 358A, HALF BRIDGE, FULL S
Stock
4

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Manufacturer :
ROHM Semiconductor
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
400A (Tc)
Drain to Source Voltage (Vdss) :
1200V (1.2kV)
FET Feature :
Silicon Carbide (SiC)
FET Type :
2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
17000pF @ 10V
Mounting Type :
Chassis Mount
Operating Temperature :
-40°C ~ 150°C (TJ)
Package / Case :
Module
Power - Max :
1570W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
-
Supplier Device Package :
Module
Vgs(th) (Max) @ Id :
5.6V @ 109.2mA
Datasheets
BSM400D12P3G002

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