TSM250NB06DCR RLG

Mfr.Part #
TSM250NB06DCR RLG
Manufacturer
Taiwan Semiconductor
Package/Case
-
Datasheet
TSM250NB06DCR RLG
Description
DUAL N-CHANNEL POWER MOSFET 60V,
Stock
17461

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Manufacturer :
Taiwan Semiconductor
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
7A (Ta), 30A (Tc)
Drain to Source Voltage (Vdss) :
60V
FET Feature :
Standard
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1461pF @ 30V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-PowerTDFN
Power - Max :
2W (Ta), 48W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
25mOhm @ 7A, 10V
Supplier Device Package :
8-PDFN (5x6)
Vgs(th) (Max) @ Id :
4V @ 250µA
Datasheets
TSM250NB06DCR RLG

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