- Manufacturer :
- EPC
- Product Category :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 1.7A, 500mA
- Drain to Source Voltage (Vdss) :
- 100V
- FET Feature :
- GaNFET (Gallium Nitride)
- FET Type :
- 3 N-Channel (Half Bridge + Synchronous Bootstrap)
- Gate Charge (Qg) (Max) @ Vgs :
- 0.16nC @ 5V, 0.044nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 16pF @ 50V, 7pF @ 50V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- 9-VFBGA
- Power - Max :
- -
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
- Supplier Device Package :
- 9-BGA (1.35x1.35)
- Vgs(th) (Max) @ Id :
- 2.5V @ 100µA, 2.5V @ 20µA
- Datasheets
- EPC2107
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|---|---|---|---|
| EPC200-CSP5 | ESPROS Photonics AG | 694 | SENSOR PHOTODIODE 850NM |
| EPC2001 | EPC | 35,000 | GANFET N-CH 100V 25A DIE OUTLINE |
| EPC2001C | EPC | 177,960 | GANFET N-CH 100V 36A DIE OUTLINE |
| EPC2007 | EPC | 35,000 | GANFET N-CH 100V 6A DIE OUTLINE |
| EPC2007C | EPC | 39,486 | GANFET N-CH 100V 6A DIE OUTLINE |
| EPC2010 | EPC | 35,000 | GANFET N-CH 200V 12A DIE |
| EPC2010C | EPC | 12,863 | GANFET N-CH 200V 22A DIE OUTLINE |
| EPC2012 | EPC | 35,000 | GANFET N-CH 200V 3A DIE |
| EPC2012C | EPC | 38,057 | GANFET N-CH 200V 5A DIE OUTLINE |
| EPC2014 | EPC | 35,000 | GANFET N-CH 40V 10A DIE OUTLINE |
| EPC2014C | EPC | 108,798 | GANFET N-CH 40V 10A DIE OUTLINE |
| EPC2015 | EPC | 35,000 | GANFET N-CH 40V 33A DIE OUTLINE |
| EPC2015C | EPC | 21,387 | GANFET N-CH 40V 53A DIE |
| EPC2016 | EPC | 35,000 | GANFET N-CH 100V 11A DIE |
| EPC2016C | EPC | 114,967 | GANFET N-CH 100V 18A DIE |
