PDTA113ES,126

Manufacturer :

NXP Semiconductors

Product Category :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

1µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 40mA, 5V

Frequency - Transition :

-

Mounting Type :

Through Hole

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Power - Max :

500 mW

Product Status :

Obsolete

Resistor - Base (R1) :

1 kOhms

Resistor - Emitter Base (R2) :

1 kOhms

Supplier Device Package :

TO-92-3

Transistor Type :

PNP - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

150mV @ 1.5mA, 30mA

Voltage - Collector Emitter Breakdown (Max) :

50 V