TDTA114E,LM
- Mfr.Part #
- TDTA114E,LM
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package/Case
- -
- Datasheet
- TDTA114E,LM
- Description
- PB-F BIAS RESISTOR BUILT-IN TRAN
- Stock
- 35000
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased
- Current - Collector (Ic) (Max) :
- 100 mA
- Current - Collector Cutoff (Max) :
- 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 5mA, 5V
- Frequency - Transition :
- 250 MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power - Max :
- 320 mW
- Product Status :
- Active
- Resistor - Base (R1) :
- 10 kOhms
- Resistor - Emitter Base (R2) :
- -
- Supplier Device Package :
- SOT-23-3
- Transistor Type :
- PNP - Pre-Biased
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500µA, 10mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Datasheets
- TDTA114E,LM
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