DDTC114ELP-7

Manufacturer :

Diodes Incorporated

Product Category :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

1µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 50mA, 5V

Frequency - Transition :

250 MHz

Mounting Type :

Surface Mount

Package / Case :

3-UFDFN

Power - Max :

250 mW

Product Status :

Active

Resistor - Base (R1) :

10 kOhms

Resistor - Emitter Base (R2) :

10 kOhms

Supplier Device Package :

X1-DFN1006-3

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 70mA

Voltage - Collector Emitter Breakdown (Max) :

50 V