PDTA113EMB,315

Manufacturer :

NXP Semiconductors

Product Category :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 40mA, 5V

Frequency - Transition :

180 MHz

Mounting Type :

Surface Mount

Package / Case :

SC-101, SOT-883

Power - Max :

250 mW

Product Status :

Active

Resistor - Base (R1) :

1 kOhms

Resistor - Emitter Base (R2) :

1 kOhms

Supplier Device Package :

DFN1006B-3

Transistor Type :

PNP - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

150mV @ 1.5mA, 30mA

Voltage - Collector Emitter Breakdown (Max) :

50 V