2PB709AS,115

Manufacturer :

NXP Semiconductors

Product Category :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

10nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

290 @ 2mA, 10V

Frequency - Transition :

80MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

250 mW

Product Status :

Obsolete

Supplier Device Package :

SMT3; MPAK

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

500mV @ 10mA, 100mA

Voltage - Collector Emitter Breakdown (Max) :

45 V