PMEM4030NS,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

2 A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1A, 2V

Frequency - Transition :

100MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Power - Max :

1 W

Product Status :

Obsolete

Supplier Device Package :

8-SO

Transistor Type :

NPN + Diode (Isolated)

Vce Saturation (Max) @ Ib, Ic :

370mV @ 300mA, 3A

Voltage - Collector Emitter Breakdown (Max) :

50 V