BSR50_J35Z

Manufacturer :

onsemi

Product Category :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

1.5 A

Current - Collector Cutoff (Max) :

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 500mA, 10V

Frequency - Transition :

-

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Power - Max :

625 mW

Product Status :

Obsolete

Supplier Device Package :

TO-92-3

Transistor Type :

NPN - Darlington

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 4mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

45 V