TTC008(Q)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

1.5 A

Current - Collector Cutoff (Max) :

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 1mA, 5V

Frequency - Transition :

-

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Power - Max :

1.1 W

Product Status :

Active

Supplier Device Package :

PW-MOLD2

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

1V @ 62.5mA, 500mA

Voltage - Collector Emitter Breakdown (Max) :

285 V