TTA008B,Q

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

2 A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA, 2V

Frequency - Transition :

100MHz

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-225AA, TO-126-3

Power - Max :

1.5 W

Product Status :

Active

Supplier Device Package :

TO-126N

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

500mV @ 100mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

80 V