DXTN5820DFDB-7

Manufacturer :

Diodes Incorporated

Product Category :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

6 A

Current - Collector Cutoff (Max) :

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

280 @ 500mA, 2V

Frequency - Transition :

80MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

3-UDFN Exposed Pad

Power - Max :

690 mW

Product Status :

Active

Supplier Device Package :

U-DFN2020-3 (Type B)

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

275mV @ 300mA, 6A

Voltage - Collector Emitter Breakdown (Max) :

20 V