BFN26E6327

Manufacturer :

Infineon Technologies

Product Category :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

200 mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 30mA, 10V

Frequency - Transition :

70MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

360 mW

Product Status :

Active

Supplier Device Package :

-

Transistor Type :

-

Vce Saturation (Max) @ Ib, Ic :

500mV @ 2mA, 20mA

Voltage - Collector Emitter Breakdown (Max) :

300 V