NESG2107M33-A

Manufacturer :

CEL (California Eastern Laboratories)

Product Category :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

140 @ 5mA, 1V

Frequency - Transition :

10GHz

Gain :

7dB ~ 10dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.5dB @ 2GHz

Operating Temperature :

150°C (TJ)

Package / Case :

3-SMD, Flat Lead

Power - Max :

130mW

Product Status :

Obsolete

Supplier Device Package :

3-SuperMiniMold (M33)

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

5V