MT3S111P(TE12L,F)
- Mfr.Part #
- MT3S111P(TE12L,F)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package/Case
- -
- Datasheet
- MT3S111P(TE12L,F)
- Description
- RF TRANS NPN 6V 8GHZ PW-MINI
- Stock
- 674
Request A Quote(RFQ)
- * Contact Name:
- Company:
- * E-Mail:
- Whatsapp:
- Comment:
- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF
- Current - Collector (Ic) (Max) :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 30mA, 5V
- Frequency - Transition :
- 8GHz
- Gain :
- 10.5dB
- Mounting Type :
- Surface Mount
- Noise Figure (dB Typ @ f) :
- 1.25dB @ 1GHz
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-243AA
- Power - Max :
- 1W
- Product Status :
- Active
- Supplier Device Package :
- PW-MINI
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 6V
- Datasheets
- MT3S111P(TE12L,F)
Manufacturer related products
Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| MT3S111(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 7,492 | RF TRANS NPN 6V 11.5GHZ SMINI |
| MT3S111TU,LF | Toshiba Electronic Devices and Storage Corporation | 1,900 | RF SIGE NPN BIPOLAR TRANSISTOR N |
| MT3S113(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 35,000 | RF TRANS NPN 5.3V 12.5GHZ SMINI |
| MT3S113P(TE12L,F) | Toshiba Electronic Devices and Storage Corporation | 1,582 | RF TRANS NPN 5.3V 7.7GHZ PW-MINI |
| MT3S113TU,LF | Toshiba Electronic Devices and Storage Corporation | 35,000 | RF TRANS NPN 5.3V 11.2GHZ UFM |
| MT3S16U(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 3,872 | RF TRANS NPN 5V 4GHZ USM |
| MT3S20P(TE12L,F) | Toshiba Electronic Devices and Storage Corporation | 35,000 | RF TRANS NPN 12V 7GHZ PW-MINI |
| MT3S20TU(TE85L) | Toshiba Electronic Devices and Storage Corporation | 35,000 | RF TRANS NPN 12V 7GHZ UFM |
