CMG03(TE12L,Q,M)
- Mfr.Part #
- CMG03(TE12L,Q,M)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package/Case
- -
- Datasheet
- CMG03(TE12L,Q,M)
- Description
- DIODE GEN PURP 600V 2A M-FLAT
- Stock
- 35000
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Discrete Semiconductor Products > Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- -
- Current - Average Rectified (Io) :
- 2A
- Current - Reverse Leakage @ Vr :
- 10 µA @ 600 V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -40°C ~ 150°C
- Package / Case :
- SOD-128
- Product Status :
- Obsolete
- Reverse Recovery Time (trr) :
- -
- Speed :
- Standard Recovery >500ns, > 200mA (Io)
- Supplier Device Package :
- M-FLAT (2.4x3.8)
- Voltage - DC Reverse (Vr) (Max) :
- 600 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.1 V @ 2 A
- Datasheets
- CMG03(TE12L,Q,M)
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| CMG02(TE12L,Q,M) | Toshiba Electronic Devices and Storage Corporation | 35,000 | DIODE GEN PURP 400V 2A M-FLAT |
| CMG03A,LQ(M | Toshiba Electronic Devices and Storage Corporation | 35,000 | MOSFET N-CH |
| CMG05(TE12L,Q,M) | Toshiba Electronic Devices and Storage Corporation | 35,000 | DIODE GEN PURP 400V 1A M-FLAT |
| CMG06(TE12L,Q,M) | Toshiba Electronic Devices and Storage Corporation | 35,000 | DIODE GEN PURP 600V 1A M-FLAT |
| CMG06A,LQ(M | Toshiba Electronic Devices and Storage Corporation | 35,000 | MOSFET N-CH |
| CMG07(TE12L,Q,M) | Toshiba Electronic Devices and Storage Corporation | 35,000 | DIODE GEN PURP 400V 1A M-FLAT |
