D850N28TXPSA1

Mfr.Part #
D850N28TXPSA1
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
D850N28TXPSA1
Description
DIODE GEN PURP 2.8KV 850A
Stock
35000

Request A Quote(RFQ)

* Contact Name:
  Company:
* E-Mail:
  Whatsapp:
  Comment:
Manufacturer :
Infineon Technologies
Product Category :
Discrete Semiconductor Products > Diodes - Rectifiers - Single
Capacitance @ Vr, F :
-
Current - Average Rectified (Io) :
850A
Current - Reverse Leakage @ Vr :
50 mA @ 2800 V
Diode Type :
Standard
Mounting Type :
Chassis Mount
Operating Temperature - Junction :
-40°C ~ 160°C
Package / Case :
DO-200AB, B-PUK
Product Status :
Obsolete
Reverse Recovery Time (trr) :
-
Speed :
Standard Recovery >500ns, > 200mA (Io)
Supplier Device Package :
-
Voltage - DC Reverse (Vr) (Max) :
2800 V
Voltage - Forward (Vf) (Max) @ If :
1.28 V @ 850 A
Datasheets
D850N28TXPSA1

Manufacturer related products

Catalog related products

  • ROHM Semiconductor
    DIODE SCHOTTKY 650V 10A TO263AB
  • onsemi
    DIODE GEN PURP 100V 200MA DO35
  • SMC Diode Solutions
    DIODE GEN PURP 400V 1A SMA
  • SMC Diode Solutions
    DIODE GEN PURP 1KV 1A SMA
  • Nexperia
    DIODE GP 100V 215MA TO236AB

Related products

Part Manufacturer Stock Description
D850-15I US-Lasers, Inc. 35,000 LASER DIODE 850NM 15MW TO18
D8505I US-Lasers, Inc. 43 LASER DIODE 850NM 5MW TO18
D850N30TXPSA1 Infineon Technologies 35,000 DIODE GEN PURP 3KV 850A
D850N32TXPSA1 Infineon Technologies 35,000 DIODE GEN PURP 3.2KV 850A
D850N34TXPSA1 Infineon Technologies 35,000 DIODE GEN PURP 3.4KV 850A
D850N36TXPSA1 Infineon Technologies 35,000 DIODE GEN PURP 3.6KV 850A
D850N40TXPSA1 Infineon Technologies 35,000 DIODE GEN PURP 4KV 850A