HS1DL R3G

Mfr.Part #
HS1DL R3G
Manufacturer
Taiwan Semiconductor
Package/Case
-
Datasheet
HS1DL R3G
Description
DIODE GEN PURP 200V 1A SUB SMA
Stock
35000

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Manufacturer :
Taiwan Semiconductor
Product Category :
Discrete Semiconductor Products > Diodes - Rectifiers - Single
Capacitance @ Vr, F :
20pF @ 4V, 1MHz
Current - Average Rectified (Io) :
1A
Current - Reverse Leakage @ Vr :
5 µA @ 200 V
Diode Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-55°C ~ 150°C
Package / Case :
DO-219AB
Product Status :
Active
Reverse Recovery Time (trr) :
50 ns
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package :
Sub SMA
Voltage - DC Reverse (Vr) (Max) :
200 V
Voltage - Forward (Vf) (Max) @ If :
950 mV @ 1 A
Datasheets
HS1DL R3G

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