1N8026-GA

Manufacturer :

GeneSiC Semiconductor

Product Category :

Discrete Semiconductor Products > Diodes - Rectifiers - Single

Capacitance @ Vr, F :

237pF @ 1V, 1MHz

Current - Average Rectified (Io) :

8A

Current - Reverse Leakage @ Vr :

10 µA @ 1200 V

Diode Type :

Silicon Carbide Schottky

Mounting Type :

Through Hole

Operating Temperature - Junction :

-55°C ~ 250°C

Package / Case :

TO-257-3

Product Status :

Obsolete

Reverse Recovery Time (trr) :

0 ns

Speed :

No Recovery Time > 500mA (Io)

Supplier Device Package :

TO-257

Voltage - DC Reverse (Vr) (Max) :

1200 V

Voltage - Forward (Vf) (Max) @ If :

1.6 V @ 2.5 A