S12JR

Mfr.Part #
S12JR
Manufacturer
GeneSiC Semiconductor
Package/Case
-
Datasheet
S12JR
Description
DIODE GEN PURP REV 600V 12A DO4
Stock
35000

Request A Quote(RFQ)

* Contact Name:
  Company:
* E-Mail:
  Whatsapp:
  Comment:
Manufacturer :
GeneSiC Semiconductor
Product Category :
Discrete Semiconductor Products > Diodes - Rectifiers - Single
Capacitance @ Vr, F :
-
Current - Average Rectified (Io) :
12A
Current - Reverse Leakage @ Vr :
10 µA @ 50 V
Diode Type :
Standard, Reverse Polarity
Mounting Type :
Chassis, Stud Mount
Operating Temperature - Junction :
-65°C ~ 175°C
Package / Case :
DO-203AA, DO-4, Stud
Product Status :
Active
Reverse Recovery Time (trr) :
-
Speed :
Standard Recovery >500ns, > 200mA (Io)
Supplier Device Package :
DO-4
Voltage - DC Reverse (Vr) (Max) :
600 V
Voltage - Forward (Vf) (Max) @ If :
1.1 V @ 12 A
Datasheets
S12JR

Manufacturer related products

Catalog related products

  • ROHM Semiconductor
    DIODE SCHOTTKY 650V 10A TO263AB
  • onsemi
    DIODE GEN PURP 100V 200MA DO35
  • SMC Diode Solutions
    DIODE GEN PURP 400V 1A SMA
  • SMC Diode Solutions
    DIODE GEN PURP 1KV 1A SMA
  • Nexperia
    DIODE GP 100V 215MA TO236AB

Related products

Part Manufacturer Stock Description
S12J GeneSiC Semiconductor 35,000 DIODE GEN PURP 600V 12A DO4
S12JC Taiwan Semiconductor 35,000 DIODE GEN PURP 600V 12A DO214AB
S12JC M6 Taiwan Semiconductor 35,000 DIODE SCHOTTKY DO214AB
S12JC M6G Taiwan Semiconductor 35,000 DIODE GEN PURP 600V 12A DO214AB
S12JC R6 Taiwan Semiconductor 35,000 DIODE SCHOTTKY DO214AB
S12JC R6G Taiwan Semiconductor 35,000 DIODE SCHOTTKY DO214AB
S12JC R7 Taiwan Semiconductor 35,000 DIODE SCHOTTKY DO214AB
S12JC R7G Taiwan Semiconductor 35,000 DIODE GEN PURP 600V 12A DO214AB
S12JC V7G Taiwan Semiconductor 35,000 DIODE GEN PURP 600V 12A DO214AB
S12JCH Taiwan Semiconductor 35,000 DIODE GEN PURP 600V 12A DO214AB
S12JCHM6G Taiwan Semiconductor 35,000 DIODE GEN PURP 600V 12A DO214AB
S12JCHR7G Taiwan Semiconductor 35,000 DIODE GEN PURP 600V 12A DO214AB