HS1D |
YANGJIE |
25,000 |
SMA 200V 1.0A Diodes Rectifier |
HS1D |
Taiwan Semiconductor |
35,000 |
DIODE GEN PURP 200V 1A DO214AC |
HS1D |
YANGJIE |
35,000 |
DIODE GEN PURP 200V 1A DO214AC |
HS1D R3G |
Taiwan Semiconductor |
4,202 |
DIODE GEN PURP 200V 1A DO214AC |
HS1D-13 |
Diodes Incorporated |
35,000 |
SUPERFAST RECOVERY RECTIFIER SMA |
HS1DAL |
Taiwan Semiconductor |
7,000 |
50NS, 1A, 200V, HIGH EFFICIENT R |
HS1DDF-13 |
Diodes Incorporated |
35,000 |
SUPERFAST RECOVERY RECTIFIER D-F |
HS1DFL |
Taiwan Semiconductor |
44,890 |
50NS 1A 200V HIGH EFFICIENT RECO |
HS1DFS |
Taiwan Semiconductor |
6,650 |
50NS, 1A, 200V, HIGH EFFICIENT R |
HS1DL M2G |
Taiwan Semiconductor |
35,000 |
DIODE GEN PURP 200V 1A SUB SMA |
HS1DL MHG |
Taiwan Semiconductor |
35,000 |
DIODE GEN PURP 200V 1A SUB SMA |
HS1DL MQG |
Taiwan Semiconductor |
35,000 |
DIODE GEN PURP 200V 1A SUB SMA |
HS1DL MTG |
Taiwan Semiconductor |
35,000 |
DIODE GEN PURP 200V 1A SUB SMA |
HS1DL R3G |
Taiwan Semiconductor |
35,000 |
DIODE GEN PURP 200V 1A SUB SMA |
HS1DL RFG |
Taiwan Semiconductor |
35,000 |
DIODE GEN PURP 200V 1A SUB SMA |