WNSC12650T6J

Mfr.Part #
WNSC12650T6J
Manufacturer
WeEn Semiconductors Co., Ltd
Package/Case
-
Datasheet
WNSC12650T6J
Description
SILICON CARBIDE SCHOTTKY DIODE
Stock
3000

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Manufacturer :
WeEn Semiconductors Co., Ltd
Product Category :
Discrete Semiconductor Products > Diodes - Rectifiers - Single
Capacitance @ Vr, F :
328pF @ 1V, 1MHz
Current - Average Rectified (Io) :
12A
Current - Reverse Leakage @ Vr :
60 µA @ 650 V
Diode Type :
Silicon Carbide Schottky
Mounting Type :
Surface Mount
Operating Temperature - Junction :
175°C
Package / Case :
4-VSFN Exposed Pad
Product Status :
Active
Reverse Recovery Time (trr) :
0 ns
Speed :
No Recovery Time > 500mA (Io)
Supplier Device Package :
5-DFN (8x8)
Voltage - DC Reverse (Vr) (Max) :
650 V
Voltage - Forward (Vf) (Max) @ If :
1.8 V @ 12 A
Datasheets
WNSC12650T6J

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