NXPSC166506Q

Mfr.Part #
NXPSC166506Q
Manufacturer
WeEn Semiconductors Co., Ltd
Package/Case
-
Datasheet
NXPSC166506Q
Description
SILICON CARBIDE POWER DIODE
Stock
3013

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Manufacturer :
WeEn Semiconductors Co., Ltd
Product Category :
Discrete Semiconductor Products > Diodes - Rectifiers - Single
Capacitance @ Vr, F :
534pF @ 1V, 1MHz
Current - Average Rectified (Io) :
16A
Current - Reverse Leakage @ Vr :
100 µA @ 650 V
Diode Type :
Silicon Carbide Schottky
Mounting Type :
Through Hole
Operating Temperature - Junction :
175°C (Max)
Package / Case :
TO-220-2
Product Status :
Active
Reverse Recovery Time (trr) :
0 ns
Speed :
No Recovery Time > 500mA (Io)
Supplier Device Package :
TO-220AC
Voltage - DC Reverse (Vr) (Max) :
650 V
Voltage - Forward (Vf) (Max) @ If :
1.7 V @ 16 A
Datasheets
NXPSC166506Q

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